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HyperX DDR3 features
- 1.7 Volts operation
- Memory signal termination inside the memory chip ("On-Die Termination") to prevent reflected signal transmission errors
- Operational enhancements to increase memory performance, efficiency and timing margins
- CAS Latencies: 5 (Ultra Low Latency) and 7 (Low Latency)
- Currently available in speeds up to 1.5GHz and capacities up to 2GB kits
- DDR3 memory modules are not backward compatible to DDR2 and DDR based motherboards, due to incompatible module connections (number of pins), voltage and DRAM technology. DDR3 memory modules have a different key or notch than the same-sized DDR and DDR2 modules to prevent their insertion into an incompatible memory socket. HyperX is available in single and dual-channel memory kits.
| Timing |
Definition |
Abbreviations |
What it does |
| |
| 7 |
CAS Latency |
CL |
Delays between activation of row and reading of row |
| 7 |
RAS to CAS
(or Row to Column Delay) |
tRCD |
Activates Row |
| 7 |
Row Precharge Delay
or RAS Precharge Delay) |
tRP/tRCP |
Deactivates Row |
| 20 |
Row Active Delay
(or RAS Active Delay, or time to ready) |
tRA/tRD/tRAS |
Number of clock cycles between activation and deactivation of row |
| 2 |
Command Rate |
CMD Rate |
Delay between chip select and command |
|
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